IXTA102N15T

new-10%

Manufacturer part number:IXTA102N15T

Manufacturer:IXYS

Description:MOSFET N-CH 150V 102A TO-263

Case Package:SOT-23

Datasheet:IXTA102N15T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	455W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	455W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5220pF @ 25V
Current - Continuous Drain (Id) @ 25°C	102A Tc
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	102A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.018Ohm
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	300A
Avalanche Energy Rating (Eas)	750 mJ
RoHS Status	ROHS3 Compliant