TK1K9A60F,S4X

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Manufacturer part number:TK1K9A60F,S4X

Manufacturer:Toshiba Semiconductor and Storage

Description:N-Channel Tube 1.9 Ω @ 1.9A, 10V ±30V 490pF @ 300V 14nC @ 10V 600V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:TK1K9A60F,S4X Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Operating Temperature	150°C
Packaging	Tube
Series	U-MOSIX
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Power Dissipation-Max	30W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.9 Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id	4V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 300V
Current - Continuous Drain (Id) @ 25°C	3.7A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.448751	$0.448751
10	$0.423350	$4.2335
100	$0.399386	$39.9386
500	$0.376780	$188.39
1000	$0.355452	$355.452

TK1K9A60F,S4X Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 490pF @ 300V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.