SCTWA50N120

join

new-10%

Manufacturer part number:SCTWA50N120

Manufacturer:STMicroelectronics

Description:SiCFET (Silicon Carbide) N-Channel 69m Ω @ 40A, 20V +25V, -10V 1900pF @ 400V 122nC @ 20V 1200V TO-247-3

Case Package:SOT-23

Datasheet:SCTWA50N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~200°C TJ
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	SiCFET (Silicon Carbide)
Base Part Number	SCTWA
Power Dissipation-Max	318W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	69m Ω @ 40A, 20V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 400V
Current - Continuous Drain (Id) @ 25°C	65A Tc
Gate Charge (Qg) (Max) @ Vgs	122nC @ 20V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	+25V, -10V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$38.80000	$38.8
10	$36.05100	$360.51
100	$31.29300	$3129.3

SCTWA50N120 Description

SCTWA50N120 MOSFET is built on well-established silicon processes that supply designers with an array of devices. SCTWA50N120 Power MOSFET has an excellent switching performance almost independent of temperature. STMicroelectronics SCTWA50N120 is utilized in high-efficiency and high power density applications.