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IRFP31N50LPBF

IRFP31N50LPBF

IRFP31N50LPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 180mOhm @ 19A, 10V ±30V 5000pF @ 25V 210nC @ 10V 500V TO-247-3

SOT-23

IRFP31N50LPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 180mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 460W Tc
Element Configuration Single
Power Dissipation 460W
Turn On Delay Time 28 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 115ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 31A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 5nF
Drain to Source Resistance 180mOhm
Rds On Max 180 mΩ
Nominal Vgs 5 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.044831 $2.044831
10 $1.929086 $19.29086
100 $1.819892 $181.9892
500 $1.716880 $858.44
1000 $1.619697 $1619.697
IRFP31N50LPBF Product Details

IRFP31N50LPBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 31A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 54 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 180mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 28 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFP31N50LPBF Features


a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 54 ns
single MOSFETs transistor is 180mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IRFP31N50LPBF Applications


There are a lot of Vishay Siliconix
IRFP31N50LPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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