ST13003DN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
ST13003DN Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
20W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
ST13003
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
20W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.2V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 500mA 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 330mA, 1A
Collector Emitter Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
9V
hFE Min
5
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
ST13003DN Product Details
ST13003DN Overview
This device has a DC current gain of 6 @ 500mA 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 330mA, 1A.The base voltage of the emitter can be kept at 9V to achieve high efficiency.The maximum collector current is 1A volts.
ST13003DN Features
the DC current gain for this device is 6 @ 500mA 2V the vce saturation(Max) is 1.2V @ 330mA, 1A the emitter base voltage is kept at 9V
ST13003DN Applications
There are a lot of STMicroelectronics ST13003DN applications of single BJT transistors.