2N3415_D75Z Overview

DC current gain in this device equals 180 @ 2mA 4.5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 3mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

2N3415_D75Z Features

the DC current gain for this device is 180 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA

2N3415_D75Z Applications

There are a lot of ON Semiconductor 2N3415_D75Z applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter