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STB10NK60ZT4

STB10NK60ZT4

STB10NK60ZT4

STMicroelectronics

N-Channel Tape & Reel (TR) 750m Ω @ 4.5A, 10V ±30V 1370pF @ 25V 70nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

STB10NK60ZT4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 750mOhm
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC 600V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 10A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB10N
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 115W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 115W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Dual Supply Voltage 600V
Nominal Vgs 3.75 V
Height 4.6mm
Length 10.4mm
Width 9.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.78143 $1.78143
2,000 $1.67165 $3.3433
5,000 $1.61676 $8.0838
STB10NK60ZT4 Product Details

STB10NK60ZT4 Description


These N-channel Zener-protected Power MOSFETs were created utilizing Super MESHTM technology from STMicroelectronics, which was optimized using ST's well-known strip-based Power MESHTM layout. This device is made to offer a high degree of dv/dt capability for the most demanding applications in addition to a notable reduction in on resistance.



STB10NK60ZT4 Features


  • Extremely high dv/dt capability

  • 100% avalanche tested

  • Gate charge minimized

  • Zener-protected



STB10NK60ZT4 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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