SISS27DN-T1-GE3

new-10%

Manufacturer part number:SISS27DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 50A PPAK 1212-8S

Case Package:SOT-23

Datasheet:SISS27DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8S
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	4.8W Ta 57W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.8W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5250pF @ 15V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Rise Time	45ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	-23A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	50A
Drain-source On Resistance-Max	0.0056Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	200A
Max Junction Temperature (Tj)	150°C
Height	830μm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant