DN2470K4-G

new-10%

Manufacturer part number:DN2470K4-G

Manufacturer:Microchip Technology

Description:Transistor MOSFET N-CH 700V 0.17A 3-Pin (2+Tab) TO-252

Case Package:SOT-23

Datasheet:DN2470K4-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	DN2470
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	42 Ω @ 100mA, 0V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 25V
Current - Continuous Drain (Id) @ 25°C	170mA Tj
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	0V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	170mA
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	700V
Pulsed Drain Current-Max (IDM)	0.5A
FET Feature	Depletion Mode
Height	2.5146mm
Length	6.73mm
Width	6.1mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free