STB13N60M2

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Manufacturer part number:STB13N60M2

Manufacturer:STMicroelectronics

Description:STB13N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB13N60M2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	MDmesh™ II Plus
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	380mOhm
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Base Part Number	STB13N
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	580pF @ 100V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	9.5 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	44A
Avalanche Energy Rating (Eas)	125 mJ
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free