STF10N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STF10N60M2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ II Plus
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Base Part Number
STF10N
Number of Channels
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Power Dissipation
25W
Turn On Delay Time
8.8 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
600m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 100V
Current - Continuous Drain (Id) @ 25°C
7.5A Tc
Gate Charge (Qg) (Max) @ Vgs
13.5nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
13.2 ns
Turn-Off Delay Time
32.5 ns
Continuous Drain Current (ID)
7.5A
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Height
16.4mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.98000
$1.98
50
$1.60240
$80.12
100
$1.41370
$141.37
500
$1.11720
$558.6
STF10N60M2 Product Details
STF10N60M2 Description
MDmeshTM M2 technology was used to develop STF10N60M2, an N-channel Power MOSFET. The device has low on-resistance and optimal switching characteristics thanks to its strip layout and improved vertical structure, making it suited for the most demanding high-efficiency converters.