STB16NF06LT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STB16NF06LT4 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
90MOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
16A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STB16N
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds
345pF @ 25V
Current - Continuous Drain (Id) @ 25°C
16A Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Rise Time
37ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
12.5 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
16A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
64A
Dual Supply Voltage
60V
Nominal Vgs
4 V
Height
4.6mm
Length
10.75mm
Width
10.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STB16NF06LT4 Product Details
STB16NF06LT4 Description
STB16NF06LT4 belongs to the family of automotive-grade N-channel STripFET? power MOSFETs that are designed based on the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process. This process makes it able to provide excellent manufacturing reproducibility based on extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps.