PSMN5R6-100PS,127 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 468 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8061pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 83 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 31 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

PSMN5R6-100PS,127 Features

the avalanche energy rating (Eas) is 468 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 83 ns

PSMN5R6-100PS,127 Applications

There are a lot of Nexperia USA Inc. PSMN5R6-100PS,127 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Uninterruptible Power Supply
• Lighting
• Micro Solar Inverter
• Motor drives and Uninterruptible Power Supplies
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Power Management Functions
• Consumer Appliances
• Industrial Power Supplies