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TK16A60W5,S4VX

TK16A60W5,S4VX

TK16A60W5,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO-220SIS

SOT-23

TK16A60W5,S4VX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Capacitance 1.35nF
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40W Tc
Element Configuration Single
Power Dissipation 40W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 7.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 300V
Current - Continuous Drain (Id) @ 25°C 15.8A Ta
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 15.8A
Drain to Source Breakdown Voltage 600V
FET Feature Super Junction
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.481050 $2.48105
10 $2.340613 $23.40613
100 $2.208126 $220.8126
500 $2.083138 $1041.569
1000 $1.965224 $1965.224

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