STB21NM60N

new-10%

Manufacturer part number:STB21NM60N

Manufacturer:STMicroelectronics

Description:MOSFET N-Ch 600 V 0.19 Ohm 17 A 2nd Gen MDmesh

Case Package:SOT-23

Datasheet:STB21NM60N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	220mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
Current Rating	17A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB21N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	220m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 50V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	84 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	68A
Dual Supply Voltage	600V
Nominal Vgs	3 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free