STE180NE10

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STE180NE10

Manufacturer part number:STE180NE10

Manufacturer:STMicroelectronics

Description:STE180NE10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STE180NE10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	STripFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	180A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STE1
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	360W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	21000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	795nC @ 10V
Rise Time	600ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	440 ns
Turn-Off Delay Time	430 ns
Continuous Drain Current (ID)	180A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	6Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	360A
Avalanche Energy Rating (Eas)	720 mJ
Isolation Voltage	2.5kV
Nominal Vgs	3 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free