STB33N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STB33N60M2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
3.949996g
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
MDmesh™ II Plus
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STB33N
Number of Channels
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Power Dissipation
190W
Turn On Delay Time
16 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
125m Ω @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1781pF @ 100V
Current - Continuous Drain (Id) @ 25°C
26A Tc
Gate Charge (Qg) (Max) @ Vgs
45.5nC @ 10V
Rise Time
9.6ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
109 ns
Continuous Drain Current (ID)
26A
Gate to Source Voltage (Vgs)
25V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STB33N60M2 Product Details
STB33N60M2 Description
The device STB33N60M2is an N-channel power MOSFET developed by MDesh M2 technology. Because of its strip layout and improved vertical structure, the device shows low on-resistance and optimized switchingfeatures, making it suitable for the most demanding high-efficiency converters.