STB42N65M5

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Manufacturer part number:STB42N65M5

Manufacturer:STMicroelectronics

Description:STB42N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB42N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	79mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB42N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
Turn On Delay Time	61 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	79m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4650pF @ 100V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	33A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	950 mJ
Height	4.6mm
Length	10.75mm
Width	10.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free