STB6N62K3

new-10%

Manufacturer part number:STB6N62K3

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 620V 5.5A D2PAK

Case Package:SOT-23

Datasheet:STB6N62K3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperMESH3™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	1.2Ohm
Technology	MOSFET (Metal Oxide)
Base Part Number	STB6N
Number of Elements	1
Power Dissipation-Max	90W Tc
Power Dissipation	90W
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.2 Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	875pF @ 50V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	5.5A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	620V
Nominal Vgs	3.75 V
Height	4.6mm
Length	10.75mm
Width	10.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free