STB95N3LLH6

new-10%

Manufacturer part number:STB95N3LLH6

Manufacturer:STMicroelectronics

Description:Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:STB95N3LLH6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Cut Tape (CT)
Series	DeepGATE™, STripFET™ VI
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Base Part Number	STB95N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	70W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	24.5nC @ 4.5V
Rise Time	91ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	23.4 ns
Turn-Off Delay Time	24.5 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.007Ohm
Height	4.6mm
Length	10.75mm
Width	10.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant