BSR12,215 Overview

DC current gain in this device equals 30 @ 50mA 1V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 10mA, 100mA.In the part, the transition frequency is 1500MHz.There is a 15V maximal voltage in the device due to collector-emitter breakdown.

BSR12,215 Features

the DC current gain for this device is 30 @ 50mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
a transition frequency of 1500MHz

BSR12,215 Applications

There are a lot of NXP USA Inc. BSR12,215 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter