IPP80N03S4L04AKSA1

new-10%

Manufacturer part number:IPP80N03S4L04AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 80A TO220-3

Case Package:SOT-23

Datasheet:IPP80N03S4L04AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	94W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 45μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	6ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	30V
Avalanche Energy Rating (Eas)	95 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead