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2SJ681(Q)

2SJ681(Q)

2SJ681(Q)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

SOT-23

2SJ681(Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 20W Ta
Power Dissipation 20W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 170m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.070579 $0.070579
500 $0.051896 $25.948
1000 $0.043247 $43.247
2000 $0.039676 $79.352
5000 $0.037080 $185.4
10000 $0.034493 $344.93
15000 $0.033359 $500.385
50000 $0.032801 $1640.05

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