NDS9410A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NDS9410A Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
7.3A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
28m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
830pF @ 15V
Current - Continuous Drain (Id) @ 25°C
7.3A Ta
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
7.3A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NDS9410A Product Details
NDS9410A Description
This N-Channel Logic Level MOSFET is made utilizing the cutting-edge PowerTrench process from Fairchild Semiconductor, which has been carefully designed to reduce the on-state resistance while maintaining exceptional switching performance.
These components are especially well suited for low voltage applications, such as battery-driven circuits and laptop computer power management, where quick switching, minimal in-line power loss, and transient resistance are required.
NDS9410A Features
7.3 A, 30 V.
High performance trench technology for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package.