SI4435DYPBF

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SI4435DYPBF

Manufacturer part number:SI4435DYPBF

Manufacturer:Infineon Technologies

Description:SI4435DYPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SI4435DYPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2320pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	MS-012AA
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.02Ohm
Pulsed Drain Current-Max (IDM)	50A
DS Breakdown Voltage-Min	30V
RoHS Status	ROHS3 Compliant