STN5PF02V

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Manufacturer part number:STN5PF02V

Manufacturer:STMicroelectronics

Description:STN5PF02V datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STN5PF02V Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-5A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	STN5P
Pin Count	4
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Voltage	20V
Power Dissipation-Max	2.5W Tc
Element Configuration	Single
Current	42A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 2.1A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	412pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.2A Tc
Gate Charge (Qg) (Max) @ Vgs	6nC @ 2.5V
Rise Time	47ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	4.2A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.1Ohm
Drain to Source Breakdown Voltage	-20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free