STE45NK80ZD

new-10%

Manufacturer part number:STE45NK80ZD

Manufacturer:STMicroelectronics

Description:STE45NK80ZD datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STE45NK80ZD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	SuperFREDmesh™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	NICKEL
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	45A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STE45
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	26000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	45A Tc
Gate Charge (Qg) (Max) @ Vgs	781nC @ 10V
Rise Time	128ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	174 ns
Turn-Off Delay Time	350 ns
Continuous Drain Current (ID)	45A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.13Ohm
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	180A
Avalanche Energy Rating (Eas)	1200 mJ
Nominal Vgs	3.75 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free