STE70NM50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STE70NM50 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
50mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Current Rating
70A
Base Part Number
STE70
Pin Count
4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
600W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
600W
Case Connection
ISOLATED
Turn On Delay Time
51 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
70A Tc
Gate Charge (Qg) (Max) @ Vgs
266nC @ 10V
Rise Time
58ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
46 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
280A
Height
9.1mm
Length
38.2mm
Width
25.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STE70NM50 Product Details
STE70NM50 Description
The STE70NM50 is an MDmesh? N-channel Zener-protected Power MOSFET associating the multiple drain process with PowerMESH? horizontal layout. The STE70NM50 has an outstanding low ON-resistance, impressively high dV/dt, and excellent avalanche characteristics. The proprietary strip technique yields overall dynamic performance that is significantly better. It is suitable for increasing the power density of high voltage converters allowing system miniaturization and higher efficiencies.