2SK2231(TE16R1,NQ)

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2SK2231(TE16R1,NQ)

Manufacturer part number:2SK2231(TE16R1,NQ)

Manufacturer:Toshiba Semiconductor and Storage

Description:2SK2231(TE16R1,NQ) datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:2SK2231(TE16R1,NQ) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Silver, Tin
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	PW-MOLD
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	5A
Number of Elements	1
Power Dissipation-Max	20W Tc
Element Configuration	Single
Power Dissipation	20W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	160mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	370pF
Drain to Source Resistance	160mOhm
Rds On Max	160 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free