STF11N65K3

new-10%

Manufacturer part number:STF11N65K3

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 650V 11.0A TO220FP

Case Package:SOT-23

Datasheet:STF11N65K3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Base Part Number	STF11
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	35W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	ISOLATED
Turn On Delay Time	14.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	850m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1180pF @ 50V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	11A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.85Ohm
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	40A
Avalanche Energy Rating (Eas)	212 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant