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STF18N60M2

STF18N60M2

STF18N60M2

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 280m Ω @ 6.5A, 10V ±25V 791pF @ 100V 21.5nC @ 10V TO-220-3 Full Pack

SOT-23

STF18N60M2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTube
Series MDmesh™ II Plus
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STF18
Number of Channels 1
Power Dissipation-Max 25W Tc
Element ConfigurationSingle
Power Dissipation25W
Turn On Delay Time12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 280m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Rise Time9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 10.6 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Height 16.4mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2394 items

Pricing & Ordering

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STF18N60M2 Product Details

STF18N60M2 Description


STF18N60M2 is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.



STF18N60M2 Features


  • Zener-protected

  • 100% avalanche tested

  • Extremely low gate charge

  • Excellent output capacitance (COSS) profile



STF18N60M2 Applications


  • Industrial

  • Automotive

  • Personal electronics


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