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STF5N52K3

STF5N52K3

STF5N52K3

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 1.5 Ω @ 2.2A, 10V ±30V 545pF @ 100V 17nC @ 10V TO-220-3 Full Pack

SOT-23

STF5N52K3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.5Ohm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF5N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection ISOLATED
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 545pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 4.4A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 525V
Height 16.4mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.04000 $1.04
50 $0.83460 $41.73
100 $0.73030 $73.03
500 $0.56640 $283.2
1,000 $0.44715 $0.44715
2,500 $0.41734 $0.83468
5,000 $0.39647 $1.98235
STF5N52K3 Product Details

STF5N52K3 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 545pF @ 100V.This device has a continuous drain current (ID) of [4.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=525V, the drain-source breakdown voltage is 525V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 29 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3.75V.Its overall power consumption can be reduced by using drive voltage (10V).

STF5N52K3 Features


a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 29 ns
a threshold voltage of 3.75V


STF5N52K3 Applications


There are a lot of STMicroelectronics
STF5N52K3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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