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STF7NM60N

STF7NM60N

STF7NM60N

STMicroelectronics

N-Channel Tube 900m Ω @ 2.5A, 10V ±25V 363pF @ 50V 14nC @ 10V TO-220-5 Full Pack

SOT-23

STF7NM60N Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 900MOhm
Base Part Number STF7N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 20W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Case Connection ISOLATED
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 20A
Height 16.4mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.02000 $3.02
50 $2.46960 $123.48
100 $2.23860 $223.86
500 $1.77660 $888.3
1,000 $1.49940 $1.4994
2,500 $1.40700 $2.814
5,000 $1.36080 $6.804
STF7NM60N Product Details

Description


The STF7NM60N is an N-channel 600 V, 0.8 |? typ., 5 A MDmesh? II Power MOSFETs in DPAK, TO-220FP and IPAK packages. These gadgets are N-channel Power MOSFETs created with MDmesh? technology's second generation. These ground-breaking Power MOSFETs combine a vertical structure with the manufacturer's strip layout to produce some of the lowest on-resistance and gate charge values ever recorded. They are consequently appropriate for high-efficiency converters that have the highest requirements.



Features


  • 100% avalanche tested

  • Low input capacitance and gate charge

  • Low gate input resistance

  • Maximum junction temperature (TJ(max))

  • Continuous drain current (ID)



Applications


  • Switching applications

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications

  • Small motor control

  • Switch Mode Power Supplies (SMPS)


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