Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STGB10H60DF

  • STGB10H60DF
  • STGB10H60DF

STGB10H60DF

STGB10H60DF

STMicroelectronics

STGB10H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB10H60DF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 2.000002g
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 115W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGB10
Element Configuration Single
Input Type Standard
Power - Max 115W
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 107 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 600V
Test Condition 400V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 10A
IGBT Type Trench Field Stop
Gate Charge 57nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 19.5ns/103ns
Switching Energy 83μJ (on), 140μJ (off)
Height 4.6mm
Length 10.4mm
Width 9.35mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.33575 $1.33575
2,000 $1.25385 $2.5077
5,000 $1.24020 $6.201
STGB10H60DF Product Details

STGB10H60DF Description


If your circuit has strong currents flowing through it, this STMicroelectronics STGB10H60DF IGBT transistor is ideal. It has a collector-emitter voltage of 600 V at its highest. It can dissipate up to 115000 mW of power. During shipment, this component will be encased in tape and reel packing to ensure safe delivery and enable quick mounting after delivery. It's only made in one configuration. This IGBT transistor can operate at temperatures as low as -55°C and as high as 175°C. Field stop|trench technology was used to create this device.



STGB10H60DF Features


  • Safe paralleling

  • Short-circuit rated

  • High-speed switching

  • Low thermal resistance

  • Tight parameters distribution

  • Ultrafast soft recovery antiparallel diode



STGB10H60DF Applications


  • UPS

  • PFC

  • Static relays

  • Light dimmer

  • Motor control

  • Electronic ignition


Related Part Number

FGH40N60SMD-F085
ON Semiconductor
FGH40N60SMD-F085
$0 $/piece
APT40GP90BG
Microsemi Corporation
APT40GP90BG
$0 $/piece
AOK60B65H1
Alpha & Omega Semiconductor Inc.
AOK60B65H1
$0 $/piece
IRG4PSC71KPBF
Infineon Technologies
IRG4PSC71KPBF
$0 $/piece
RGT30NS65DGC9
ROHM Semiconductor
RGT30NS65DGC9
$0 $/piece
ISL9V2040D3ST
ON Semiconductor
ISL9V2040D3ST
$0 $/piece
IXBH10N170
IXYS
IXBH10N170
$0 $/piece
IXGH48N60A3
IXYS
IXGH48N60A3
$0 $/piece
IKW20N60H3FKSA1
Infineon Technologies
IKW20N60H3FKSA1
$0 $/piece
IXA17IF1200HJ
IXYS
IXA17IF1200HJ
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News