IKW20N60H3FKSA1 Description

A High-Speed IGBT in Trench and Field-Stop Technology with a Soft, Fast Recovery Anti-Parallel Diode is the IKW20N60H3FKSA1. The fast device is used to make the active components smaller (25 to 70kHz). The switching and conduction losses are best balanced by the high speed 3 families. This family's distinguishing trait is its minimal turn-OFF losses, MOSFET-like turn-OFF switching behavior.

IKW20N60H3FKSA1 Features

• Halogen-free

• Green product

• Short-circuit capability

• Excellent performance

• Very good EMI behaviour

• Low switching and conduction losses

• Low switching losses for high efficiency

• Fast switching behaviour with low EMI emissions

• Best-in-class IGBT efficiency and EMI behaviour

• Small gate resistor for reduced delay time and voltage overshoot

• Packaged with and without freewheeling diode for increased design freedom

• Optimized diode for target applications, meaning further improvement in switching losses

• Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour

• Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz

IKW20N60H3FKSA1 Applications

• Power Management

• Alternative Energy