STGW38IH130D datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW38IH130D Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.500007g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
250W
Base Part Number
STGW38
Pin Count
3
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
424 ns
Collector Emitter Voltage (VCEO)
1.3kV
Max Collector Current
63A
Collector Emitter Breakdown Voltage
1.3kV
Voltage - Collector Emitter Breakdown (Max)
1300V
Collector Emitter Saturation Voltage
2.1V
Test Condition
960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 20A
Continuous Collector Current
55A
Turn Off Time-Nom (toff)
740 ns
Gate Charge
127nC
Current - Collector Pulsed (Icm)
125A
Td (on/off) @ 25°C
-/284ns
Switching Energy
3.4mJ (off)
Gate-Emitter Voltage-Max
25V
Gate-Emitter Thr Voltage-Max
5.75V
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STGW38IH130D Product Details
STGW38IH130D Description
STGW38IH130D is a very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. STGW38IH130D is well-suited for resonant or soft-switching applications,according to STGW38IH130D datasheet.
STGW38IH130D Features
Low switching loss Low saturation voltage High current capability Low static and peak forward voltage drop freewheeling diode