IRG4BH20K-SPBF

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IRG4BH20K-SPBF

Manufacturer part number:IRG4BH20K-SPBF

Manufacturer:Infineon Technologies

Description:IRG4BH20K-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BH20K-SPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	60W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	11A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	60W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	26ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	4.3V
Max Collector Current	11A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.17V
Turn On Time	51 ns
Test Condition	960V, 5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4.3V @ 15V, 5A
Turn Off Time-Nom (toff)	720 ns
Gate Charge	28nC
Current - Collector Pulsed (Icm)	22A
Td (on/off) @ 25°C	23ns/93ns
Switching Energy	450μJ (on), 440μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	400ns
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free