STGB30H60DFB Description

The STGB30H60DFB device is IGBT developed using an advanced proprietary trench gate field-stop structure. The STGB30H60DFB device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGB30H60DFB Features

• Maximum junction temperature: T_J = 175 °C

• High speed switching series

• Minimized tail current

• Low saturation voltage: V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A

• Tight parameter distribution

• Safe paralleling

• Positive V_CE(sat) temperature coefficient

• Low thermal resistance

• Very fast soft recovery antiparallel diode

STGB30H60DFB Applications

• Photovoltaic inverters

• High frequency converters

• New Energy Vehicle

• Photovoltaic Generation

• Wind Power Generation

• Smart Grid