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RJP6085DPK-00#T0

RJP6085DPK-00#T0

RJP6085DPK-00#T0

Renesas Electronics America

IGBT 600V 40A 178.5W TO-3P

SOT-23

RJP6085DPK-00#T0 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 178.5W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Input Type Standard
Turn On Delay Time 30 ns
Power - Max 178.5W
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 60 ns
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 40A
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.33000 $4.33
10 $3.86300 $38.63
25 $3.47680 $86.92

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