IGB20N65S5ATMA1 Description

The IGB20N65S5ATMA1 is a 650 V, 20 A IGBT with an anti-parallel diode in the TO263 package.

IGB20N65S5ATMA1 Features

• Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP? 5 H5

• I C(n)=four times nominal current (100°C Tc)

• Soft current fall characteristics with no tail current

• Symmetrical, low voltage overshoot

• The gate voltage is under control (no oscillation). No risk of unwanted turn-on of the device and no need for gate clamping

• Maximum junction temperature Tvj=175°C

• Qualified according to JEDEC standards

IGB20N65S5ATMA1 Applications

• Energy Storage Systems

• Industrial heating and welding

• Power Management (SMPS) - Reference Design

• Solutions for photovoltaic energy systems