STGB30V60F  Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operations.

STGB30V60F  Features

Maximum junction temperature: Tj= 175 °C

Tail-less switching off

VcE(sat)

= 1.85 V (Typ.)@Ic= 30 A.

Tight parameters distribution

Safe paralleling

Low thermal resistance

STGB30V60F  Applications

Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

Very high-frequency converters