STGB35N35LZ-1

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Manufacturer part number:STGB35N35LZ-1

Manufacturer:STMicroelectronics

Description:STGB35N35LZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB35N35LZ-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	VOLTAGE CLAMPING
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	176W
Base Part Number	STGB35
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Logic
Power - Max	176W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	380V
Max Collector Current	40A
Collector Emitter Breakdown Voltage	345V
Turn On Time	7600 ns
Test Condition	300V, 15A, 5V
Vce(on) (Max) @ Vge, Ic	1.7V @ 4.5V, 15A
Turn Off Time-Nom (toff)	37000 ns
Gate Charge	49nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	1.1μs/26.5μs
Gate-Emitter Voltage-Max	12V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant