NGB8207ANT4G Description

For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.

NGB8207ANT4G Features

• Ideal for Coil?on?Plug and Driver?on?Coil Applications

• Gate?Emitter ESD Protection

• Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• Minimum Avalanche Energy ? 500 mJ

• Gate Resistor (RG) = 70

• This is a Pb?Free Device

NGB8207ANT4G Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial