IHW15N120E1XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IHW15N120E1XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2006
Series
TrenchStop™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
156W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Input Type
Standard
Power - Max
156W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
30A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 15A
Turn Off Time-Nom (toff)
1450 ns
IGBT Type
NPT and Trench
Gate Charge
90nC
Current - Collector Pulsed (Icm)
45A
Switching Energy
300μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.968800
$4.9688
10
$4.687547
$46.87547
100
$4.422214
$442.2214
500
$4.171900
$2085.95
1000
$3.935755
$3935.755
IHW15N120E1XKSA1 Product Details
IHW15N120E1XKSA1 Description
IHW15N120E1XKSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IHW15N120E1XKSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 30A. The IHW15N120E1XKSA1 has 3 pins and it is available in Tube packaging way. IHW15N120E1XKSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.