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STGB3NB60SDT4

  • STGB3NB60SDT4
  • STGB3NB60SDT4

STGB3NB60SDT4

STGB3NB60SDT4

STMicroelectronics

STGB3NB60SDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB3NB60SDT4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 70W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating 3A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGB3
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 70W
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 150ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 6A
Reverse Recovery Time 1.7μs
Continuous Drain Current (ID) 3A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.5V
Turn On Time 275 ns
Test Condition 480V, 3A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 3A
Turn Off Time-Nom (toff) 4800 ns
Gate Charge 18nC
Current - Collector Pulsed (Icm) 25A
Td (on/off) @ 25°C 125ns/3.4μs
Switching Energy 1.15mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.444080 $3.44408
10 $3.249132 $32.49132
100 $3.065219 $306.5219
500 $2.891716 $1445.858
1000 $2.728034 $2728.034
STGB3NB60SDT4 Product Details

STGB3NB60SDT4 Description


STMicroelectronics has created an innovative family of IGBTs, the PowerMESHTM IGBTs, with exceptional performance using the most recent high voltage technology based on a proprietary strip layout. A family with the suffix "S" is one that has been optimized to obtain the least amount of on-voltage drop for low-frequency (1kHz) applications.



STGB3NB60SDT4 Features


  • HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

  • VERY LOW ON-VOLTAGE DROP (Vcesat)

  • HIGH CURRENT CAPABILITY

  • OFF LOSSES INCLUDE TAIL CURRENT

  • INTEGRATED FREEWHEELING DIODE

  • SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”)



STGB3NB60SDT4 Applications


  • GAS DISCHARGE LAMP

  • STATIC RELAYS

  • MOTOR CONTROL


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