STGBL6NC60DT4

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Manufacturer part number:STGBL6NC60DT4

Manufacturer:STMicroelectronics

Description:STGBL6NC60DT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGBL6NC60DT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	56W
Terminal Form	GULL WING
Base Part Number	STGBL6
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	6.7 ns
Power - Max	56W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	67 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	14A
Reverse Recovery Time	50 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	10.5 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 3A
Turn Off Time-Nom (toff)	122 ns
Gate Charge	12nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	6.7ns/46ns
Switching Energy	46.5μJ (on), 23.5μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free