STGD18N40LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGD18N40LZT4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
350.003213mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
VOLTAGE CLAMPING
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
125W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STGD18
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Logic
Turn On Delay Time
650 ms
Power - Max
125W
Transistor Application
AUTOMOTIVE IGNITION
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
13.5 s
Collector Emitter Voltage (VCEO)
360V
Max Collector Current
25A
Collector Emitter Breakdown Voltage
420V
Collector Emitter Saturation Voltage
1.35V
Max Breakdown Voltage
420V
Turn On Time
4450 ns
Test Condition
300V, 10A, 5V
Vce(on) (Max) @ Vge, Ic
1.7V @ 4.5V, 10A
Turn Off Time-Nom (toff)
22200 ns
Gate Charge
29nC
Current - Collector Pulsed (Icm)
40A
Td (on/off) @ 25°C
650ns/13.5μs
Gate-Emitter Voltage-Max
16V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.81340
$1.6268
5,000
$0.77910
$3.8955
STGD18N40LZT4 Product Details
STGD18N40LZT4 IGBT Description
The sophisticated PowerMESHTM technology is used in this STGD18N40LZT4IGBT, resulting in a superb trade-off between switching performance and low on-state behavior. Overvoltage protection is provided by the built-in Zener diodes between the gate-collector and gate-emitter. The device also has a low on-state voltage drop and a low threshold drive, making it suitable for application in vehicle ignition systems. Furthermore, the ESD-protected logic level gate input and integrated gate resistor eliminate the need for external protective circuitry.
STGD18N40LZT4 IGBT Features
AEC Q101 compliant
180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH