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STGD18N40LZT4

STGD18N40LZT4

STGD18N40LZT4

STMicroelectronics

STGD18N40LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGD18N40LZT4 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 350.003213mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature VOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGD18
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Logic
Turn On Delay Time 650 ms
Power - Max 125W
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 13.5 s
Collector Emitter Voltage (VCEO) 360V
Max Collector Current 25A
Collector Emitter Breakdown Voltage 420V
Collector Emitter Saturation Voltage 1.35V
Max Breakdown Voltage 420V
Turn On Time 4450 ns
Test Condition 300V, 10A, 5V
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 10A
Turn Off Time-Nom (toff) 22200 ns
Gate Charge 29nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 650ns/13.5μs
Gate-Emitter Voltage-Max 16V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.81340 $1.6268
5,000 $0.77910 $3.8955
STGD18N40LZT4 Product Details

STGD18N40LZT4 IGBT Description


The sophisticated PowerMESHTM technology is used in this STGD18N40LZT4 IGBT, resulting in a superb trade-off between switching performance and low on-state behavior. Overvoltage protection is provided by the built-in Zener diodes between the gate-collector and gate-emitter. The device also has a low on-state voltage drop and a low threshold drive, making it suitable for application in vehicle ignition systems. Furthermore, the ESD-protected logic level gate input and integrated gate resistor eliminate the need for external protective circuitry.



STGD18N40LZT4 IGBT Features


AEC Q101 compliant

180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH

ESD gate-emitter protection

Gate-collector high voltage clamping

Logic level gate drive

Low saturation voltage

High pulsed current capability

Gate and gate-emitter resistor



STGD18N40LZT4 IGBT Applications


General Motor Driver

PTC Heater

Oil Pump

HVAC Systems

Switching Device

Pencil coil electronic ignition driver

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