SGF23N60UFTU

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Manufacturer part number:SGF23N60UFTU

Manufacturer:ON Semiconductor

Description:SGF23N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:SGF23N60UFTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Weight	6.962g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	75W
Current Rating	12A
Base Part Number	SG*23N60
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	75W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	23A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	55 ns
Test Condition	300V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 12A
Turn Off Time-Nom (toff)	320 ns
Current - Collector Pulsed (Icm)	92A
Td (on/off) @ 25°C	17ns/60ns
Switching Energy	115μJ (on), 135μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	250ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free