STGF10H60DF Description

STGF10H60DF were created employing a cutting-edge unique trench gate fieldstop construction. These devices are part of the H series of IGBTs, which provides the best balance of conduction and switching losses for high switching frequency converter efficiency. In addition, a slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution make paralleling safer.

STGF10H60DF Features

? Switching at a high rate

? A tight distribution of parameters

? Secure parallelization

? Thermal resistance is low

? Rated for short-circuiting

? Antiparallel diode with ultrafast soft recovery

STGF10H60DF Applications

? Motor management

? UPS services

? PFC (Perfluorocarbon)