STGWT40H65DFB Description

STGWT40H65DFB is an IGBT Transistor. The  STMicroelectronics STGWT40H65DFB is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGWT40H65DFB is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Additionally, the slightly positive VCE(sat) temperature coefficient and extremely narrow parameter distribution result in a safer paralleling operation.

STGWT40H65DFB Features

• Minimized tail current

• Maximum junction temperature: TJ = 175 °C

• Low thermal resistance

• High-speed switching series

• Safe paralleling

• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A

• Tight parameter distribution

• Positive VCE(sat) temperature coefficient

• Very fast soft recovery antiparallel diode

STGWT40H65DFB Applications

• Stand-alone inverters

• Grid-tie inverters

• Battery backup inverters

• Intelligent hybrid inverters,

• High-frequency converters